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revision 3.0 page 1 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor features ? tri-linear color array 3 x 14404 pixels ? 5um 2 pixels. ? 32 line spacing between color channels. ? dual shift register per channel. ? improved blue response filter ? dark reference pixels provided. ? antireflective glass standard. ? wide dynamic range, low noise. ? no image lag. ? electronic exposure control. ? high charge transfer efficiency. ? two-phase register clocking. ? clocks are 74act logic compatible. ? 10 mhz maximum data rate. typical key specifications ? dynamic range >12 bits ? output signal 2.7v ? saturation signal 250k electrons ? prnu(med) 5% ? lag (first field) 0.06% ? dark current 0.002pa/pixel (max.) ? cte per transfer 0.999998 ? no darkfield defects allowed ? no brightfield defects allowed pin description symbol description pin phia accumulation phase clock 32 tg transfer gate clock 9 logn exposure control for channel (r,g,b) 34,6,7 h1a,b phase 1 ccd clock 19,39 h2a,b phase 2 ccd clock 2,22 phir reset clock 12 vidn blue output video (r,g,b) 25,16,14 vdd amplifier supply 26 vssn ground reference (r,g,b) 24,17,13 ls light shield / exposure drain 8 og output gate 28 rd reset drain 29 sub substrate / ground 1,3,4,5,10,11,15,18,20, 21,23,27,30,31,33,37, 38,40 id test input - input diode 35 ig test input - input gate 36 revision number: 3.0 september 8, 2003 sub h1a sub sub ig id logr sub phia sub sub rd og sub vdd vidr vssr sub h2b sub sub h2a sub sub sub logg logb ls tg sub sub phir vssb vidb sub vidg vssg sub h1b sub 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
revision 3.0 page 2 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor single channel schematic 2 blank ccd cells 2 blank ccd cells vdd vidn vssn sub rd phir og odd shift register even shift register id ig tg phian logn 16 dark 16 test 14404 active pixels h1a h2a h1b h2b h1a h2a h1b h2b ls/ lod 4 b l a n k c c d c e l l s 4 b l a n k c c d c e l l s block diagram vidb vidr 16 dark 14403 active pixels 16 test 4 blank 8 blank vidg equivalent pixels per channel
revision 3.0 page 3 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor general description the kli-14403 is a high resolution, tri-linear array designed for high resolution colo r scanning applications. each device contains 3 rows of 14,404 active photoelements, consisting of high performance 'pinned diodes' fo r improved sensitivity, lower noise and the elimination of lag. the pixel height and pitch is 5 micron and the center-to-center spacing between color channels is 160 microns, givi ng an effective 32 line delay between adjacen t channels during imaging. each row is selectively covered with a r ed, green or blue integral filter stripe fo r unparalleled spectral separation. electronic expo sure control is provided to achieve system color balance. readout of the pixel data for each channel is accomplished through the use of a single ccd shift register allowing for a single output per channel with no multiplexing artifacts. sixteen light shielded photoelements are supplied at the output end of each channel to ac t as a dark reference. the devices are manufactured using nmos, buried channel processing and utilize dual layer polysilicon and dual layer metal technologies. the die size is 76.89 mm x 1.06 mm and is housed in a custom 40-pin, 0.600" wide, dual in line package with ar coated cover glass. the kli-14403 device is a member of a family of tri-linear ccd imagers that can ease transitional designs between different resolu tion solutions. other family of devices; kli- 10203 (10k pixel trilinear), kli-8023 (8k pixel trilinear), the kli-6013 (6k trilinear with improved color filters) and the kli-6003 (6k trilinear) are de signed for ease in transitional designs.
revision 3.0 page 4 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor image specifications specifications given under nominally specified operating conditions fo r the given mode of operation @ 25 o c, f clk = 500khz (data rate = 1 mhz), 14.45 ms integration period, ar coverglass, color filters, and an active load as shown in figure 4, unless otherwise specified. see notes on next page for further descriptions. symbol parameter min. nom. max. units remarks vsat saturation output voltage 2.2 2.7 - - - vp-p notes 1, 9 deltavo/deltan e output sensitivity - - - 10.8 - - - v/e- ne,sat saturation signal charge - - - 250,000 - - - electrons r responsivity notes 2, 9, 10 (@ 450 nm) - - - 3.5 - - - v/microj/cm2 10 % (@ 550 nm) - - - 4 - - - v/microj/cm2 10 % (@ 650 nm) - - - 6.5 - - - v/microj/cm2 10 % dr dynamic range - - - 78 - - - db note 3 idark dark current - - - 0.002 0.10 pa/pixel note 4 cte charge transfer efficiency 0.999995 0.999998 - - - - - - note 5 l lag - - - 0.06 0.1 % 1st field vo,dc dc output offset 6.0 7.5 9.0 volts note 9 prnu, low photoresponse non-uniformity, low frequency - - - 7.5 15 % p-p note 6 prnu, med photoresponse non-uniformity, medium frequency - - - 5 10 % p-p note 7 prnu, high photoresponse non-uniformity, high frequency - - - 10 20 % p-p note 8 dark def darkfield defect, brightpoint - - - - - - 0 allowed notes 11,12 bfld def brightfield defect, dark or bright - - - - - - 0 allowed notes 11,13 exp def exposure control defects - - - 30 64 allowed notes 11,14 bw amplifier bandwidth - - - 57 - - - mhz rout output resistance - - - 300 - - - ohms delta oe odd-even offset - - - - - - 20 mv delta oe dark variance odd even offset variance (dark) - - - - - - 40 mv delta oe brt variance odd even offset variance (bright) - - - - - - 40 mv
revision 3.0 page 5 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor image specification notes 1 defined as the maximum output level achievable before linearity or prnu performance is degraded beyond specification 2. with color filter. values spec ified at filter peaks. 50% bandwid th = 30 nm. color filter arrays become transparent after 710 nm. it is recommen ded that a suitable ir cut filter be used to maintain spectral balance and optimal mtf. see chart of typical responsivity later in this document. 3. this device utilizes 2-phase clocking for canc ellation of driver displacement currents. symmetry between phi1 and phi2 phases must be maintained to minimize clock noise. 4. dark current doubles approximately every +9c. 5 measured per transfer. for the tota l line: (.999995) * 14,436 = 0.9304. 6. low frequency response is measured across the entire array with a 1000 pixel-moving window and a 5 pixel median filter evaluated under a flat field illumination. 7. medium frequency response is measured across the entire array with a 50 pixel-moving window and a 5 pixel median filter evaluated under a flat field illumination. 8. high frequency response non-uniformity represents individual pixel defects evaluated under a flat field illumination. an individual pixel value may deviate above or below the average response for the entire array. zero individual defec ts allowed per this specification. 9. increasing the current load (nominally 4ma) to improve signal bandwidth will decrease these parameters. 10. if resistive loads are used to set current, the am plifier gain will be reduced, thereby reducing the output sensitivity an d net responsivity. 11. defective pixels will be separated by at least one non-defective pixel within and across channels. 12. pixels whose response is greater than the aver age response by the specified threshold, (16mv). see line 1 in figure below. 13. pixels whose response is greater or less than the average response by the specified threshold, (20%). see lines 2 and 3 in figure below. 14. pixels whose response deviates from the aver age pixel response by the specified threshold, (5mv), when operating in exposure control mo de. see lines 4 and 5 in figure below. if dark pattern correction is used with exposure control, the dark pattern acquisition should be completed with exposure control actuated. dark current t ends to suppress the magnitude of these defects as observed in typical applications, hence line rate changes may effect perceived defect magnitude. note: zero defects allowed for those pixels whose response deviates from the average pixel response by a 20mv threshold.
revision 3.0 page 6 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor defective pixel classification exposure exposure signal out signal out 4 5 linear response of a typical pixel 3 2 1 linear response of a typical pixel notes: 1 ? dark offset error 2,3 - brightfield defects; bright (2), or dark (3) 4,5 - exposure control mode defects, fast (4), or s l o w (5) p ix e l s . color filter response and description a filter set has been implemented for a series of tri-linear image sensors optimized for color negative scanning. values for the various nominal wavelength positions are shown below with corresponding tolerances for responsivity and wavelength as indicated. see figure 1 for clarification of parameters. independent of filter type, a degree of variation in the spectral response for the kli-series tri- linear image sensors can be expected from the natural manufacturing tolerances of the process. this variation is due to the combined va riations in filter properties (net density and filter peak wavelength position) and the device properties (sensitivity and film thickness variations). values for gauging filter performance are determined from figure 1. the center (or peak) transmission wavelength is specified as lam bda0, and the 50% point s are given as lambda1 and lambda2, corresponding to the near and far wavelength sides of the filter pass band. for the red filter, only the near wavelength value is presented. the red filter, as well as the blue and green filters, exhibits a high level of tr ansmission beyond the 700nm (i.e., the filters become transparent). the far wavelength edge is as sumed controlled by the system ir cut filter characteristics.
revision 3.0 page 7 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor filter variation parameters color image sensors wavelength filter parameter wavelength responsivity tolerance (nm) tolerance (nm) (typical) 3 sigma (typical) green lambda 0,g 535 12% 8 lambda 1,g 506 - 8 lambda 2,g 577 - 8 blue lambda 0,b 462 12% 8 lambda 1,b 413 - 8 lambda 2,b 505 - 8 red lambda 0,r 650 12% lambda 1 , r 598 - 8
revision 3.0 page 8 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor absolute maximum ratings (note 10) parameter symbol min. max. units notes gate pin voltages vgate 0 16 v 1, 2 pin-to-pin voltage vpin-pin 16 v 1, 3 diode pin voltages vdiode -0.5 16 v 1, 4 output bias current idd -10 -1 ma 5 output load capacitance cvid,load 10 pf 9 ccd clocking frequency fclk 5 mhz 6 operating temperature top 0 70 o c 7 storage temperature tst -25 80 o c 8 notes: 1. referenced to substrate voltage. 2. includes pins: h 1n, h2n , tg1, phia, phir , og, ig, and logn. 3. voltage difference (either polarity) between any two pins. 4. includes pins: vidn, vssn, rd, vdd, ls and id. 5. care must be taken not to short output pi ns to ground during operation as this may cause permanent damage to the output structures. 6. charge transfer efficiency will degrad e at frequencies higher than the maximum clocking frequency. vidn load resistor values may need to be decreased as well. 7. noise performance will degrade with increasing temperatures. 8. long term storage at the maximum tem perature may accelerate color filter degradation. 9. exceeding the upper limit on output load capacitance will greatly reduce the output frequency response. thus, direct probing of the output pins with conventional oscilloscope probes is not recommended. 10. the absolute maximum ratings indicate the limits of this device beyond which damage may occur. the operating ratings indi cate the conditions that the device is functional. operating at or near thes e ratings do not guarantee specific performance limits. guaranteed specifications and test conditions are contained in the image specifications section.
revision 3.0 page 9 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor dc bias operating conditions symbol parameter min. nom. max. units notes v sub substrate ----- 0 ----- v v vss output buffer return 0.5 0.65 0.75 v v rd reset drain bias 10.5 11 11.5 v v vdd output buffer supply 14.5 15 15.5 v i idd output bias current/channel -8 -4 -2 ma 1 v og output gate bias 0.5 0.65 0.75 v v phia acummulation phase bias -0.25 0 0.5 v v ls light shield / drain bias 12 15 15.5 v v ig test pin - input gate ----- 0 ----- v v id test pin - input diode 12 15 15.5 v notes: 1. a current sink must be supplied fo r each output. load capacitance should be minimized so as not to limit bandwidt h. circuit below is just one solution. device input esd protection circuit (schematic) to device function sub i/o pin v t - 20 v caution : to allow for maximum performance, this device was designed with limited input protection; thus, it is sensitive to electrostatic induced damage. these devices should be installed in accordance with strict esd handling procedures!
revision 3.0 page 10 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor typical output bias/buffer circuit 2n2369 or similar* r x =180 * r l =750 ohms * 0.1 microf to device output pin: vidn (minimize path length) buffered output vdd ohms * rx serves as the load bias for the on- chip amplifiers. choose the values of rx and rl to optimize for specific operating frequency. rx should not be less than 75 ohms. notes: 1. recommended delays for correlated double sampling (cds) of output. 2. minimum value required to ensure proper operation, allowing for on-chip propagation delay. ac electrical characteristics ? ac timing requirements (typical) symbol parameter 5mhz ccd operation 500khz ccd operation units remarks 1e = 1/fclk ccd element duration 0.2 2 s 1e count trise h1a/b, h2a/b rise time 20 200 ns 1l = tint line/integration period 1.445 14.45 ms 7218e counts tpd pd-ccd transfer period 3.2 32 s 16e counts ttg transfer gate clear 0.2 2 s 1e count tdr charge drain duration 100 1000 ns note 2 trst reset pulse duration 20 -- ns tcd clamp to h2 delay 8 -- ns note 1 tsd sample to reset edge delay 8 -- ns note 1
revision 3.0 page 11 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor notes: 1. care should be taken to insure that low rail overshoot does not exceed -0.5 vdc. exceeding this value may result in non-photogenerated charged being injected into the video signal. 2. connect pin to ground potential for app lications where exposure control is not required. clock line capacitance symbol parameter min. nom. max units notes c h1 phase 1 clock capacitance -- 1940 -- pf 1 c h2 phase 2 clock capacitance -- 2010 -- pf 1 c tg1 transfer gate 1 capacitance -- 680 -- pf c phir reset gate capacitance -- 12 -- pf c log exposure gate capacitance -- 140 -- pf (1 of 3) notes: 1. this is the total load capacitance per ccd phase. since the ccds are driven from both ends of the sensor, the effective load capaci tance per drive pin is approximately half the value listed. ac electrical characteristics ? ac timing requirements symbol parameter min. nom. max. vh1nh,vh2nh ccd readout clocks high 6.25 6.5 7.0 vh1nl,vh2nl ccd readout clocks low -0.1 0.0 0.1 vtgnh transfer clocks high 6.25 6.5 7.0 vtgnl transfer clocks low -0.1 0.0 0.1 vphirh reset clock high 6.25 6.5 7.0 vphirl reset clock low -0.1 0.0 0.1 vlognh exposure clocks high 6.25 6.5 7.0 vlognl exposure clocks low -0.1 0.0 0.1
revision 3.0 page 12 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor timing diagram 7202e 8e 4e 7202e 8e 4e h1n h2n tg2 line timing logn tint tdr accumulation gate-to-ccd transfer timing h 1n h 2n 1e logn tpd ttg first dark reference pixel data valid 8e 8e 2e 2e 7202e 8e 4e 7202e 8e 4e 8e 8e 2e 2e texp tdr h2n output timing phir vidn clamp * sample * tr vdark vsat trst tcd tsd h1n 1e vfeedthru tclp tspl even output odd output tg
revision 3.0 page 13 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor kli-14403 functional description imaging during the integration period, an image is obtained by gathering electrons generated by photons incident upon the photodiodes. the char ge collected in the photodiode array is a linear function of the local exposure. the charge is stored adjacent the photodiode in the accumulation region phia, and is isolated from the ccd shift registers during the integration period by the transfer gates tgn, which are held at a barrier potential. at the end of a given integration period, the ccd register clocking is stopped with the h1 and h2 gates being held in a 'high' and 'low' state respectively. next, the tg gate is turned 'on' causing the charge to drain from the phi? region, into the tg region. as the tg gate is turned to an 'off' state, charge is transferred into the h1 storage region , isolating the shift registers from the detecto r region once again. complementary clocking of the h1 and h2 phases is then resumed fo r readout of the current line of data while the next line of data is integrated. separate tg gates are provided for each channel allowing for independent transfer to the shift register, fo r each channel. however, the parallel connection of the shift register clocks requires tha t h1/h2 clocking of all three channels be mom entarily suspended, during the parallel transfe r from any channel photosites. charge transport and sensing readout of the signal charge is accomplished by two-phase, complementary clocking of the h 1 and h 2 gates. the register architecture has been designed for high speed clocking with minimal transport and output signal degradation, while still maintaining low (6.25v p-p min) clock swings for reduced power dissipat ion, lower clock noise and simpler driver design. the data in all registers is clocked simultaneously toward the output structures. the signal is then tran sferred to the out put structures in a parallel format at the falling edge of the h 2 clock. re-settable floating diffusions are used for the charge-to-voltage conversion while source followers provide buffe ring to external connections. the potential change on the floating diffusion is dependent on the amount of signal charge and is given by dv fd = dq/c fd . prior to each pixel output, the floating diffusion is returned to the rd level by the reset clock, phi r.
revision 3.0 page 14 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor typical performance measurements kli-14403 (monochrome) typical quantum efficiency (% ) 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 350 450 550 650 750 850 wavelength (nm)
revision 3.0 page 15 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor kli-14403 reference design the kodak kli-14403 reference design provides a baseline reference fo r the design of a kli-14403 image sensor into your electronic imaging application. the circuit below uses inexpensive off-the-shelf components to p rovide volta g e-translated clock si g nals and dc bias su pp lies re q uired to master oscillator pld kli-14403 image sensor +15 v 2n3904 180 750 .1 vout red + 15v 2n3904 180 750 .1 vou t gre e +15 v 2n3904 180 750 .1 vout blue mps3646 mps5771 33 100k 100k 220pf 220pf .1 1n914a 1n914a 1k logb logr logg 25 12 14 22 19 2 39 6 34 7 9 h1a h2b h2a h1b 74act11244 ig sub 1,3,10,11,15,18,20,21,23,27,30,31,33 ,37,38,40 36 phir 1n914 or eqiv .1 10 uf .1 uf 18k 820 100 uf ferrite bead + 15v vssr vssg vssb vdd rd og 26 29 28 13 17 24 16 vidg vidr vidb 10 k .1 .1 .1 .1 2a1 2a2 2a3 2a4 1a1 1a2 1a3 1a4 1y1 1y2 1y3 1y4 2y1 2y2 2y3 2y4 1/g 2/g 2a1 2a2 2a3 2a4 1a1 1a2 1a3 1a4 1y1 1y2 1y3 1y4 2y1 2y2 2y3 2y4 1/g 2/g +12.0v +6.8 v +6.8 v +6.8 v 100 100 74act11244 el7202 .1 .1 35 id rd rd rd rd .1 .1 ls 8 tg +6.8 v el7202 +6.8 v el7202 100 100 32 phia
revision 3.0 page 16 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor reference design circuit overview programmable logic see the timing waveform requirements earlier in this document before programming a logic device. clock drivers there are three types of clock drivers (voltage translating buffers) used in this reference design. the most im portant performance consideration is the ability of the clock driver to drive the capacitive loads pr esented by the various gates of the ccd. reset driver the reset gate presents a sm all capacitive load of 100 pf, and requires fast rise and fall times. the complimentary bipolar switching transistor circuit shown above provides a low cost solution. the ci rcuit alternately drives the pnp and npn transistors into saturation, which switches the output between vcc and ground. a 33- ohm series damping resistor is used to suppress ringing. exposure control and transfer gates the exposure control gates; logr, logg, and logb, and the transfer gate; tg each present a moderate capacitive lo ad of 500 pf. the elantec 7202 dual-channel power mosfet driver delivers a peak out put current of 2 amperes - more than enough to meet the rise and fall requirements of the log and tg gate. series damping resistors are used to prevent ri nging in the log gates. the transfer gates are connected together and driven by a single el7202. ccd shift register driver the ccd clock phases (h1a, h2a, h1b and h2 b) present a significant load of 3100 pf per phase. two 74act11244 octal buffers provide an efficient solution. each clock phase is driven by four gates connected in parallel to increase output drive current. the 6.5-volt swing required by the shift register is obtained by setting vcc to 6.8 volts. series damping resistors rd are used to suppress ringing of the cloc k signals. values for rd should be varied to eliminate ringing and achieve 50% crossover between each pair of shift register clocks. bias supplies vdd, rd and og vdd and vrd are supplied directly from the 15v input power supply and og is supplied by a voltage divider. the input power should be sufficiently filtered to preven t noise from coupling into the output st age of the kli-14403 through the vdd node. current spikes in the vrd and vdd nodes, du e to switching of the on-chip reset fet, are suppressed by the addition of a 0.1 uf decoupling capacitor to ground at each node. the decoupling capacitors should be located as close as possible to the pins o f the ccd and should have a solid connection to ground. og is also decoupled to suppress voltage spikes the output gate of the device. the og node draws negligible current.
revision 3.0 page 17 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor og,vssr,vssg,vssb, phia a forward-biased diode provides an inexpensive and reliable voltage source for all three vss nodes. the switching action of the reset fet of the output stage can cause voltage spikes to occur on the vss nodes. a decoupling capacitor located as close as practical to each vss pin, and connected to a solid system ground, w ill minimize voltage spiking. in high dynamic range systems, crosstalk betw een vss channels might present a noise problem. a separate supply for each of t he three vss nodes will minimi ze channel cro sstalk if it proves to be a problem. output buffers an emitter follower circuit buffers each output channel. the emitter follower provides a high impedance load to the on-chip source follo wer output stage, and provides low output impedance for driving the downstream analog sig nal processing circuits. a 180-ohm resisto r connected between the base and emitter of the emitter follower uses the forward biased base to emitter voltage drop to provide a const ant current load for the on-chip output stage.
revision 3.0 page 18 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor package configuration for the serialized version, a non-sequential, non-r epeating serial number will be written on the back of the package.
revision 3.0 page 19 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor two-sided multilayer anti-reflecti ve cover glass specification (mar) maximum reflectance allowed (two sided) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 400450500550600650700 wavelength (nm) reflectance (%) reflectance (two sided)
revision 3.0 page 20 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor general device and parameter descriptions charge transfer efficiency charge transfer efficiency (cte) is a meas ure of how efficiently electronic charge can be transported by a charge coupled device (ccd). this parameter is especiall y important in linear imager technology due to the fact that ccds are often required to transport charge packets over long distances at very high speeds. the result of poo r cte is to reduce the overall mtf of the line image in a nonlinear fashion: the portion o f the line image at the far end of the ccd will be degraded more than the image at the output end of the ccd, since it will undergo more ccd transfers. there are many possible mechanisms that can negatively influence the cte. amongst these mechanisms are included excessive ccd clocking frequency, insufficient drive potential on the ccd clocking gates, and inco rrect voltage bias on the output gate (og signal). the effect of these mechanisms is that some charge is "left behind" during a ccd transfer clocking cycle. depending on the limiting mechanism, the lost charge could be added to the immediate trailing cell or to a cell further back in time; thus, causing a horizontal smearing of the line image. the charge lost from a ccd cell, afte r being transferred out of the ccd, is measured with respect to the original charge level and is termed the charge transfer ineffi ciency (cti). cti is defined as cti = ? ? ? ? ? total charge lost charge injected in each pixel ? ? ? ? ? ? ? ? 1 number of ccd transfers ? ? ? ? ? ? ? = 1 ? cti , or cte = 1 ? ? ? ? ? ? total charge lost charge injected in each pixel ? ? ? ? ? ? ? ? 1 number of ccd transfers ? ? ? . note that the total transfer efficiency fo r the entire line (tte) is equal to (cte) n , where n is the total number of transfers which is equal to the number of phases per cell times the number of cells (n). dark reference pixels dark reference pixels are groups of photosensitive pixels covered by a metal light shield. these pixels are used as a black level reference for the image sensor output. since the incident light is blocked from entering these pixels, the signal contained in these pixels is due only to dark current. it is assumed that each photosensitive pixel (active and dark reference) will have appr oximately the same dark signal; thus, subtracting the average dark reference signal from each active pixel signal will remove the background dark signal level. dark refe rence pixels are typically located at one o r both ends of the arrays, as shown earlier in this document for a linear image sensor in the single channel schematic. dark signal evaluation the dark signal evaluation measures the t hermally generated electronic current (i.e.
revision 3.0 page 21 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor background noise signal) at a specific o perating temperature. dark current is measured will all incident radiation remov ed (i.e. imager is in the dark). the curren t measured by the picoammeter is the dark current of the photodiode array plus the dark current of the ccd array. multiplying the dark current by the total integration time yields the quantity of dark charge. and dividing the dark current by the numbe r of photodiodes yields the dark current per photodiode (i dark ). dark voltage increases linearly with integration time, the worst ca se value occurs at the slowest clocking frequency. additionally, dark current doubles for approximately every 9c increase in temperature. dynamic range dynamic range (dr) is the ratio of the maximum output signal, or saturation level, o f an image sensor to the dark noise level of the imager. the dark noise level, or noise floor of an imager is typically expressed as the root mean square (rms) variation in dark signal voltage. the dark signal includes components from dark current within the photosite and ccd regions, reset transist or and output amplifier noise, and inpu t clocking noise. an input referred noise signal in the charge domain can be calculated by dividing the dark noise voltage by the im ager charge-to-voltage conversion factor. the dynamic range is typically expressed in units of decibels as: dr = 20 . log exposure control exposure control is implemented by selectively clocking the log gates during portions of the scanning line time. by applying a large enough positive bias to the log gate, the channel potential is increased to a level beyond the 'pinning level' o f the photodiode. (the 'pinning' level is t he maximum channel potential which the photodiode can achieve and is fixed by the doping levels of the structure.) with tg in an 'off' state and log strongly biased, all of the photocurrent will be drawn off to the ls drain. referring to the timing diagrams, one notes that the exposure can be controlled by pulsing the log gate to a 'high' level while tg is turning 'off' and then returning the log gate to a 'low' bias level sometime during the line scan. the effective exposure (t exp ) is the net time between the falling edge of the log gate and the falling edge of the tg gate (end of the line). separate log connections for each channel are provided enabling on-chip light source and image spectral colo r balancing. as a cautionary note, the switchin g transients of the log gates during line readout may inject an artifact at the sensor output. rising edge artifacts can be avoided by switching log during the photodi ode-to-ccd transfer period, preferably, during the tg falling edge. depending on clocking speeds, the falling edge of the log should be synchronous with the h 1/ h 2 shift register readout clocks. for ver y fast applications, the falling edge of the log gate may be limited by on-chip rc delays across the array. in this case arti facts may extend across one or more pixels. correlated double sampling (cds) processing of the output waveform can remove the first order magnitude of such artifacts. in high dynamic range applications, it may be advisable to limit the log fall times to mi nimize the current transients in the device substrate and limit the magnitude of t he artifact to an acceptable level. fixed pattern noise if the output of an image sensor under no illumination is viewed at high gain a distinc t non-uniform pattern, or fixed pattern noise, can be seen. this fixed pattern can be
revision 3.0 page 22 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor removed from the video by subtracting the dark value of each pixel from the pixel values read out in all subsequent frames. dark fixed patte rn noise is usually caused by variations in dark current across an imager, but can also be caused by input clocking signals abruptly starting or stopping or by having the ccd cl ocks not being close compliments of each other. mismatched ccd clocks can result in high instantaneous substrate currents, which when combined with the fact that t he silicon substrate has some non zero resistance can result in the substrate potential bouncing. the pattern noise can also be seen when the imager is under uniform illumination. an imager which exhibits a fixed pattern noise under uniform illumination and shows no pattern in the dark is said to have light pattern noise o r photosensitivity pattern noise. in addition to the reasons mentioned above, light pattern noise can be caused by the imager entering saturation, the nonuniform clipping effect of the antiblooming circuit, and by non-uniform, photosensitive pixel areas often caused by debris covering portions of some pixels. imager responsivity responsivity is a measure of the imager output when exposed to a given optical energ y density. it is measured on monochrome and color (if applicable) versions of an imager ove r the entire wavelength range of operation. imagers having multiple photodiode arrays with differing color filters and/or photodiode di mensions have responsivity measured on each array lag lag, or decay lag is a measure of the amount of photogenerated charge left behind during a photodiode-to-ccd transfer cycle. ideally, no charge is left behind during such transfers and lag is equal to zero; that is, 100% of the collected photogenerated charge is transferred to the adjacent ccd. the use of "pinned" photodiode technology enables the linea r imagers to achieve near perfect lag performanc e. improper transfer gate (tg) clocking levels can introduce a lag type response. thus, care must be taken to ensure that the clocking levels are not limiting the lag performance. linearity the non-linearity of an image sensor is typica lly defined as the percent deviation from the ideal linear response, which is defined by t he line passing through vsat and vdark. the percent linearity is then 100 minus the non-li nearity. the output linearity of a solid state image sensor is determined from the linearity of the photon collection process, the electron exposure structure nonlinearities (if it exists), the efficiency of charge transportation from the photosite to the output amplifier, and the output amplifier linearity. the absorption o f photons within the silicon substrate can be cons idered an ideal linear function of incident illumination level when averaged over a given peri od of time. the existence of an electronic exposure control circuit adjacent to the photos ensitive sites can introduce a non-linearity into the overall response by allowing small quantities of charge to remain isolated in unwanted potential wells. whether or not any po tential wells exist depends on the design and manufacturing of the particular image sensor . the existence of such potential wells in the exposure circuitry, also ca lled exposure defects, will degrade the linearity only at small
revision 3.0 page 23 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor signal levels and may be different from one photosite to the next. an image sensor with excessive exposure defects would be rejected du ring quality assurance testing. the loss o f charge during the transportation of charge pack ets from the photosite to the ccd, which is termed lag, tends to effect the linearity only at very small signal levels. "pinned" photodiodes, or buried photodiodes, have ex tremely small lag (< 0.5%), and can be considered to be lag free. t he ccd charge transfer ineffici ency (cti) will reduce the amplitude of the charge packet as it is transp orted towards the output amplifier, with the greatest effect realized at very small si gnal levels. modern ccd's have cte in excess o f 0.999999 per ccd transfer; thus, the overall effect on linearity is generally not a concern. i f biased properly, the output amplifier will yield a nonlinearity of typically less than 2%. non linearity at signal levels beyond the saturation level is expected and can often var y significantly from pixel to pixel. linearity evaluation ideally, the output video amplitude should vary linea rly with incident light intensity over the entire input range of irradiance. there ar e many possible phenomena which can cause non-linearity in the response curve; inadeq uate cte and improper biasing or clocking to name a few. electronic exposure control could be used to vary the photodiode integration time; however, since electronic exposure control can introdu ce non-linearity, it is not recommended as a method of input signal variation. the output si gnal versus relative irradiance is graphed and a least-squares, linear regressi on fit to the data is performed. the best-fit data curve should pass through zero volts and remain linear (r 2 > 0.99) up to the vsat level. modulation transfer function (mtf) mtf is the magnitude of the spatial frequency response of a solid-state imager. the three main components of imager mtf are termed the aperture mtf, diffusion mtf, and charge transfer efficiency mtf. the aperture mtf result s from the discrete sampling nature of solid state imagers, with smaller pixel pitches yielding a higher mtf response. the diffusion o f photogenerated charge degrades the imager response and is responsible for the second component. the third component is due to inefficient charge transfer in the shift register. the maximum frequency an imager can detect without aliasing occurring is defined as the nyquist frequency and is equal to one over two times the pixel pitch. mtf is typically reported at the nyquist frequen cy, 1/2 nyquist, and 1/4 nyquist. the aperture mtf limits the maximum response at nyquist to 0.637 (note that the maximum mtf response is 1.0). the diffusion component will further degrade this va lue, especially at longer optical wavelengths. noise noise is any unwanted signal added to the imag er output. temporal noise sources present in a typical imager include the dark current, photon shot noise, reset transistor noise, ccd clocking noise, and the output amplifier noise . dark current is dependent on the image r operating temperature and can be reduced by co oling the imager. the reset transistor noise can be removed using correlated double sampling signal processing. the photon shot noise cannot be eliminated; however, by acquiring and averaging several frames it, and all temporal noise sources, can be reduced. the va riation in dark current from pixel to pixel
revision 3.0 page 24 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor leads to a dark noise pattern across an imager. the effects of this dark pattern noise can be minimized by averaging several frames and then using the pixel-referenced, dark frame data as the zero reference level for each pixel. noise evaluation the noise evaluation measures the noise levels associated with operating the imager at the specified clocking speeds and temperatures. the test is performed with imager temperature held stable and all incident light is removed. the noise contributions of the evaluation circuitry need to be removed from the calculation. once this is done, the total imager noise will be approximately equal to the sum of squa res of each of the ccd clocking noise, outpu t amplifier noise, and the dark current noise. photodiode quantum efficiency for a given area, absolute quantum efficienc y is defined as the ratio of the number o f photogenerated electrons captured during an int egration period to the number of impinging photons during that period. higher values in dicate a more efficient photon conversion process and hence are more desirable. absolute photodiode quantum efficiency is calculated from the charge-to-voltage, image r responsivity, and measured active photodiode area. it's calculated over the entire wavelength range of operation and graphed on a curve as percent quantum efficienc y versus wavelength. given that the charge-to-voltage, responsivi ty, and active photodiode dimensions have all been measured, the absolute quantum e fficiency can be calculated as quantum efficiency () = responsivity () charge to voltage active photodiode area energy per photon () where energy per photon () = h . c and h . c = 1.98647e ? 25 [ j ? m ] . ( ) = 100% r( ) dv dn e are a diode hc . photoresponse non-uniformity (prnu) the measurement is taken in a flat field white light. the intensity of the collimated light is se t to a value approximately 10% to 20% below the saturated signal level. depending on the windowing length used, one region of pixels is observed for uniformity at a time. the average response is calculated for each non-overlapping wi ndowed section. in the case of medium o r low frequency prnu measurements, a medium filter of 3-7 pixels is applied to this region to eliminate the effects of single point defects . the maximum and minimum pixel is determined for each windowed section. again, for each section, the following formula is applied:
revision 3.0 page 25 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor prnu = 100% ( maximum_pixel_value ? minimum_pixel_value ) mean_pixel_value . each section is then compared against the specific ation to identify the region with the largest percent deviation from the av erage response for the imager. resolution the resolution of a solid state image sensor is the spatial resolving power of that sensor. the spatial resolution of a sensor is descried in the spatial frequency domain by plotting the modulation transfer function (mtf) versus spat ial frequency. the discrete sampling nature o f solid state image sensors gives rise to a samp ling frequency which will determine the upper limit of the sensor's frequency response. resolution is frequently described in terms of the number o f dots or photosites per inch (dpi) in the imager or object planes. for example, a linear image sensor with a single array of 1000 photosites of pitch 10 m would have a resolution of 2540 dpi (1000 / (1000 x .01mm x 1"/25.4mm)). if the sensor is used in an optical system to image an 8" wide document, then the resolution in the document plane would be 125 dpi (1000 pixels / 8"). this example is slightly misleading in that it does not consider the frequency response o f the sensor or the optics. in reality, the sensor will have an mtf of between 0.2 and 0.7 at the nyquist spatial frequency and the optics are likely to have an mtf of 0.6 to 0.9 at the nyquis t frequency. it is important to note that ev en though a sensor may have a high enough sampling frequency for a particular application, the overall frequency response of the sensor and optics may not be sufficient for the application! saturation voltage the saturated signal level is the output voltage corresponding to the maximum charge packe t the imager can handle. adding charge above the saturated level results in the excess charge "spilling" over into neighboring photosites or ccd structures. either the photodiode capacity o r the ccd capacity, with the latter being the most ty pical case can limit the charge capacity. the saturated signal level is measured by monitoring the dark-to-light transition between the first-ou t dark reference pixels and the first active pixels while the irradiance is slowly increased. note that improper settings on either the output gat e (og) or the reset gate (phir) can have a clipping effect on the output waveform. smear smear, also referred to as photodiode-to-ccd crosstalk, occurs when photogenerated charge diffuses to an adjacent ccd and is collected, as opposed to being collected in the photodiode where the photon absorption occurred. the result of smear is to increase the background signal within the dark reference pixels and ccd buffer pixels. this increased background signal reduces the achievable dynamic range; hence, a high smear value is undesirable. the furthe r the photodiode array and the ccd are apart, the less the smear. contributors to increased smear are a short photodiode-to-ccd separation and improper transfer gate clocking levels o r timing. smear is also highly dependent on inci dent photon wavelength. in the application, an ir cut-off filter (~710nm) is recommended.
revision 3.0 page 26 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor quality and reliability ? quality strategy: all devices will conform to the maximum and minimum specifications stated in this document. this is accomplished through a combination of statistical process control and inspection at key points of the production process. typical specification limits are not guaranteed but provided as a design target. ? replacement: all devices are warranted agains t failures in accordance with the terms o f sale. ? cleanliness: devices are shipped free of m obile contamination inside the package cavity. immovable particles and scratches that are within the imager pixel area and the corresponding cover glass region directly above t he pixel sites are also not allowed. the cover glass is highly susceptible to particles and other contaminat ion. touching the cover glass must be avoided. see iss application note ds 00-009, cover glass cleaning, for further information. ? mechanical: device assembly drawing is provided as a reference. the device will conform to the published package tolerances. ? esd precautions: devices are shipped in stat ic-safe containers and should only be handled a t static-safe workstations. ? reliability: information concerning the qualit y assurance and reliability testing procedures and results are available from the image sensor solutions, and can be supplied upon request. ? test data retention: devices have an identifyi ng number traceable to a test data file. tes t data is kept for a period of 2 years after date of shipment. ordering information contact the eastman kodak company for more information. address all inquiries and purchase orders to: image sensor solutions eastman kodak company rochester, new york 14650-2010 phone: (716) 722-4385 fax: (716) 477-4947 email: ccd@kodak.com web: www.kodak.com/go/ccd kodak reserves the right to change any information contained herein without notice. all information furnished by kodak is believed to be accurate. warning: life support applications policy image sensor solutions, eastman kodak company products are not authorized for and should no t be used within life support systems without the specific written consent of the eastman kodak company. product warranty is limited to replacem ent of defective components and does not cove r injury to persons or property or other consequential damages.
revision 3.0 page 27 of 27 eastman kodak company - image sensor solutions web: www.kodak.com/go/ccd phone: (716) 722-4385 email: ccd@kodak.com eastman kodak company technical data kodak digital science kli-14403 image sensor revision changes revision number description of change 3.0 ac electrical characteristics ? ac timing requirements table on page 10 corrected and updated for 5mhz and 500khz operation. eliminate reference to color filter type ii on page 7 ? now only one type of filter.
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